The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
英飛凌K40H1203 / IKW40N120H3是英飛凌第三代1200V高開關速度IGBT單管, 能夠完美替代K40T120 / K40T1202 ,專用于焊接、太陽能發(fā)電逆變器和UPS等IGBT高頻應用領域。
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Low switching losses for high efficiency
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Fast switching behaviour with low EMI emissions
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Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
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Short circuit capability
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Excellent performance
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Low switching and conduction losses
K40H1203 / IKW40N120H3 特點:
•最高結溫度為175℃
•非常低VCEsat
•低開關損耗
•較高的開關堅韌性
•內(nèi)置快速恢復反并聯(lián)二極管
•根據(jù)JEDEC1合格為目標
•無鉛引腳電鍍符合RoHS標準
應用范圍:
•UPS(不中斷電源/不間斷電源)
•焊接器
•太陽能發(fā)電用逆變器
IKW40N120H3 產(chǎn)品信息:
集電極直流電流: 40A
集電極發(fā)射飽和電壓, Vce: 2.4V
晶體管封裝類型: TO-247
功耗 Pd: 483W
產(chǎn)品范圍: -
針腳數(shù): 3引腳
工作溫度最高值: 175°C
集電極發(fā)射電壓, Vceo: 1.2kV
原產(chǎn)地: Philippines
進行最后一道重要生產(chǎn)流程所在的國家
RoHS 合規(guī): 是
稅則號: 85412900
重量(千克): .00542